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Part Number: BFT25A

 

MFG: PHI

 

D/C: 07+

Description: The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as...


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BFT25A General Description


The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.

The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

BFT25A Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 8 V
VCEO collector-emitter voltage open base − 5 V
VEBO emitter-base voltage open collector − 2 V
IC collector current (DC)   − 6.5 mA
Ptot total power dissipation up to Ts = 165 °C;
note 1		 − 32 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175

BFT25A Features

• Low current consumption (100 µA − 1 mA)
• Low noise figure
• Gold metallization ensures excellent reliability.

BFT25A Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from  uch improper use or sale.

BFT25A datasheet

BFT25A
PDF/DataSheet Download

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