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BFT45

Features: • Low current (max. 500 mA)• High voltage (max. 250 V).Application• High voltage switching and amplification• Industrial and telephone applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter &...

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SeekIC No. : 004299965 Detail

BFT45: Features: • Low current (max. 500 mA)• High voltage (max. 250 V).Application• High voltage switching and amplification• Industrial and telephone applications.Specifications ...

BFT45 Data Sheet

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Part Number:
BFT45
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current (max. 500 mA)
• High voltage (max. 250 V).


Application

• High voltage switching and amplification
• Industrial and telephone applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − -250 V
VCEO collector-emitter voltage open base − -250 V
VEBO emitter-base voltage open collector − -5 V
IC collector current (DC)   − -500 mA
ICM peak collector current   − -1 A
IBM peak base current   − -200 mA
Ptot total power dissipation Tcase 50 °C − 5 W
Tstg storage temperature   −65 +150
Tj junction temperature   − 200
Tamb operating ambient temperature   −65 +150



Description

PNP high-voltage transistor BFT45 in a TO-39 metal package.


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