BFT46,215

Forward Transconductance gFS (Max / Min) :
Resistance Drain-Source RDS (on) :
Configuration : Single
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : - 25 V
Maximum Drain Gate Voltage : 25 V
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Package / Case : SOT-23
Drain Source Voltage VDS : 25 V
Power Dissipation : 250 mW
Gate-Source Cutoff Voltage : 1.2 V
Drain Current (Idss at Vgs=0) : 0.2 mA to 1.5 mA
Continuous Drain Current : 10 mA


Parameters:

Technical/Catalog Information	BFT46,215
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Drain (Idss) @ Vds (Vgs=0)	200A @ 10V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	5pF @ 10V
Power - Max	250mW
Packaging	Tape & Reel (TR)
Package / Case	SST3 (SOT-23-3)
Voltage - Cutoff (VGS off) @ Id	1.2V @ 0.5nA
Voltage - Breakdown (V(BR)GSS)	-
Resistance - RDS(On)	-
Current Drain (Id) - Max	10mA
Drawing Number	568; SOT23; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BFT46,215 BFT46,215