Position: Home  > All Categories> Integrated Circuits (ICs) > BFU510

BFU510

Features: • Very high power gain• Very low noise figure• High transition frequency• Emitter is thermal lead• Low feedback capacitance• 45 GHz SiGe process.Application• RF front end• Wideband applications, e.g. analog and digital cellular telephones, ...

product image

BFU510 Picture
See larger image
SeekIC No. : 004299973 Detail

BFU510: Features: • Very high power gain• Very low noise figure• High transition frequency• Emitter is thermal lead• Low feedback capacitance• 45 GHz SiGe process.Applica...

BFU510 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFU510
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.


Application

• RF front end
• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 9 V
VCEO collector-emitter voltage open base − 2.3 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 15 mA
Ptot total power dissipation Ts 115 °C; note 1; see Fig.2 − 35 mW
Tstg storage temperature   −65 +150
Tj junction temperature   − 150



Description

NPN SiGe wideband transistor BFU510 for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Cable Assemblies
CS1W-CN114
XW2Z-500T
Tools
TCP202
G084SN05 V.3
Discrete Semiconductor Products
T508N12TOF
MUR20040
Transformers
TM-09210
BV222-1-00992
View more