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MFG:PHILIPS  Package Cooled:06+  D/C:SOT343  

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BFU Series Datasheet download

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Part Number: BFU540

 

MFG: PHILIPS

Package Cooled: 06+

D/C: SOT343

Description: NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


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BFU540 General Description


NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

BFU540 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 9 V
VCEO collector-emitter voltage open base 2.3 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC)   50 mA
Ptot total power dissipation  Ts 98 °C; note 1; see Fig.2 115 mW
Tstg storage temperature   −65 +150
Tj junction temperature   150

BFU540 Features

• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.

BFU540 Typical Application

• RF front end
• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.

BFU540 datasheet

BFU540
PDF/DataSheet Download

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  • ·BFU510
  • PHILIPS [Philips Semiconductors] 
  • NPN SiGe wideband transistor 
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  • BFU510 Datasheet Download

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