BFU725F

The BFU725F is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.You should be careful that the NPN silicon germanium microwave transistor for high speed,low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features of the BFU725F are:(1)noise figure (NF)=0.7 dB at 5.8 GHz;(2)high maximum stable gain 27 dB at 1.8 GHz;(3)Low noise high gain microwave transistor;(4)110 GHz fT silicon germanium technology.It can be used in (1)analog/digital cordless applications;(2)WLAN and CDMA applications;(3)low noise amplifiers for microwave communications systems;(4)satellite radio;(5)2nd LNA stage and mixer stage in DBS LNB's;(6)Ka band oscillators (DRO's).

The quick reference data of the BFU725F can be summarized as:(1)collector-base voltage:10 V;(2)collector-emitter voltage:2.8 V;(3)emitter-base voltage:2 V;(4)collector current:25 to 40 mA;(5)total power dissipation:136 mW;(6)DC current gain:160 to 400;(7)collector-base capacitance:70 fF;(8)transition frequency:55 GHz;(9)maximum power gain:18 dB.If you want to know more information such as the electrical characteristics about the BFU725F,please download the datasheet in www.seekdatasheet.com .