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BFY181

Features: • HiRel Discrete and Microwave Semiconductor• For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.• Hermetically sealed microwave package• fT= 8 GHz F = 2.2 dB at 2 GHz• Space Qualified ESA/SCC Detail Spec. No.: 5611/006 ...

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BFY181: Features: • HiRel Discrete and Microwave Semiconductor• For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.• Hermetically sealed microwave pac...

BFY181 Data Sheet

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Part Number:
BFY181
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

•  HiRel Discrete and Microwave Semiconductor
•  For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.
•  Hermetically sealed microwave package
•  fT= 8 GHz
   F = 2.2 dB at 2 GHz
•   Space Qualified
     ESA/SCC Detail Spec. No.: 5611/006
     Type Variant No. 03


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VBE=0 VCES 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2 V
Base current IB 2 1) mA
Collector current IC 20 mA
Total power dissipation
TS 137°C 2), 3)		 Ptot 175 mW
Junction temperature Tj 200
Ambient temperature TA -65 ... +200
Storage temperature Tstg -65 ... +200
Thermal Resistance
Junction - soldering point3) RthJS < 360 K/W

Notes.:
1) The maximum permissible base current for VFBE measurements is 15mA (spot-measurement duration < 1s)
2) At TS = + 137 °C. For TS > + 137 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.




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