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BFY183

Features: · HiRel Discrete and Microwave Semiconductor· For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.· Hermetically sealed microwave package· fT= 8 GHz F = 2.3 dB at 2 GHz· qualified· ESA/SCC Detail Spec. No.: 5611/006Specifications PARAMETER SYMBOL...

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BFY183: Features: · HiRel Discrete and Microwave Semiconductor· For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.· Hermetically sealed microwave package· fT= 8 GHz F = 2....

BFY183 Data Sheet

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Part Number:
BFY183
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  HiRel Discrete and Microwave Semiconductor
·  For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
·  Hermetically sealed microwave package
·  fT= 8 GHz
     F = 2.3 dB at 2 GHz
·   qualified
·  ESA/SCC Detail Spec.
     No.: 5611/006


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VBE=0 VCES 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2 V
Base current IB 5 1) mA
Collector current IC 65 mA
Total power dissipation
TS 99°C 2)		 Ptot 450 mW
Junction temperature Tj 200
Ambient temperature TA -65 ... +200
Storage temperature Tstg -65 ... +200
Thermal Resistance
Junction - soldering point2) RthJS < 225 K/W

Notes.:
1) The maximum permissible base current for VFBE measurements is 20mA (spot-measurement duration < 1s)
2) TS is measured on the collector lead at the soldering point to the pcb.




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