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BLA1011-200

Transistors RF MOSFET Power BULK TNS-MICP

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SeekIC No. : 00220678 Detail

BLA1011-200: Transistors RF MOSFET Power BULK TNS-MICP

BLA1011-200 Data Sheet

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Part Number:
BLA1011-200
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.03 GHz to 1.09 GHz Gain : 13 dB
Output Power : 200 W Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-538A Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gain : 13 dB
Output Power : 200 W
Frequency : 1.03 GHz to 1.09 GHz
Package / Case : SOT-538A
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V


Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance.


Application

• Avionics transmitter applications in the 1030 to 1090 MHz frequency range.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   − 65 V
VGS gate-source voltage   − ±15 V
Ptot total power dissipation Th 25 °C;Tp =50 µs; =2% − tbd A
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 200 °C



Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLA1011-200 encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.




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