Transistors RF MOSFET Power LDMOS TNS
BLA1011S-200,112: Transistors RF MOSFET Power LDMOS TNS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 1.03 GHz to 1.09 GHz | Gain : | 13 dB | ||
| Output Power : | 200 W | Drain-Source Breakdown Voltage : | 75 V | ||
| Gate-Source Breakdown Voltage : | +/- 22 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | SOT-538B | Packaging : | Tube |
| Technical/Catalog Information | BLA1011S-200,112 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 75V |
| Current Rating | 1uA |
| Package / Case | 2-LDMOST, SOT502B |
| Packaging | Bulk |
| Drawing Number | 568; SOT502; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLA1011S 200,112 BLA1011S200,112 |