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BLA1011S-200

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220418 Detail

BLA1011S-200: Transistors RF MOSFET Power LDMOS TNS

BLA1011S-200 Data Sheet

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Part Number:
BLA1011S-200
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/2/28

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.03 GHz to 1.09 GHz Gain : 13 dB
Output Power : 200 W Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-538B Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gain : 13 dB
Output Power : 200 W
Frequency : 1.03 GHz to 1.09 GHz
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V
Package / Case : SOT-538B


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