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BLA1011-300

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220586 Detail

BLA1011-300: Transistors RF MOSFET Power LDMOS TNS

BLA1011-300 Data Sheet

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Part Number:
BLA1011-300
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.03 GHz to 1.09 GHz Gain : 16.5 dB
Output Power : 300 W Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 15 A Gate-Source Breakdown Voltage : +/- 15 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-957A
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gain : 16.5 dB
Output Power : 300 W
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 15 A
Frequency : 1.03 GHz to 1.09 GHz
Drain-Source Breakdown Voltage : 75 V
Package / Case : SOT-957A


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