MFG:PHILIPS Package Cooled:(LX)high-frequency
MFG: PHILIPS
Package Cooled: (LX)high-frequency
Description: Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (...
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (BLF0810-90) with a ceramic cap or in a 2-lead earless package (BLF0810S-90). The common source is connected to the flange.
Typical CDMA IS95 performance at standard settings at a supply voltage of 27 V and IDQ =500mA
PL =18W
GP =16dB
=26%
ACPR <−45 dBc at 750 kHz and BW = 30 kHz
ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | − | 75 | V |
| VGS | gate-source voltage | − | ±15 | V |
| Tstg | storage temperature | −65 | +150 | °C |
| Tj | junction temperature | − | 200 | °C |
BLF0810-90
PDF/DataSheet Download
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