BLF147 Selling Leads, Price trend, BLF147 DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low intermodulation distortion· Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 ...

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BLF147: Features: · High power gain· Low intermodulation distortion· Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS...

BLF147 Data Sheet

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Part Number:: BLF147
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/28

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Recent History
What is this?

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Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS

Product Details

Description

Features:

· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			25	A
Ptot	total power dissipation	up to Tmb = 25 C; total device;both sections equally loaded		220	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF147 designed for industrial and military applications in the HF/VHF frequency range.

The transistor BLF147 is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated
from the flange.

The BLF147 is a marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to 'General' section for further information.

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BLF147

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