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Part Number: BLF177

 

 

 

 

Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the H...


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BLF177 General Description


Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange.

A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information.

BLF177 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 110 V
VGS gate-source voltage 20 V
ID DC drain current 16 A
Ptot total power dissipation up to Tmb = 25 °C 220 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF177 Features

* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch.

BLF177 Connection Diagram

BLF177 Connection Diagram

BLF177 datasheet

BLF177
PDF/DataSheet Download

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