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BLF177CR,112

Transistors RF MOSFET Power VDMOS TNS

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SeekIC No. : 00220416 Detail

BLF177CR,112: Transistors RF MOSFET Power VDMOS TNS

BLF177CR,112 Data Sheet

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Part Number:
BLF177CR,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 108 MHz Gain : 19 dB
Output Power : 150 W Drain-Source Breakdown Voltage : 125 V
Continuous Drain Current : 16 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-121B
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gain : 19 dB
Drain-Source Breakdown Voltage : 125 V
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 16 A
Output Power : 150 W
Frequency : 108 MHz
Package / Case : SOT-121B


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