BLF1820-90

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 12 A
Package / Case : LDMOST-3


Features:

* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
Output power = 90 W (PEP)
Gain = 12 dB
Efficiency = 32%
dim = -26 dBc
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (1800 to 2000 MHz)
* Internally matched for ease of use.


Application

* RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±15	V
ID	DC drain current			12	A
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

90 W LDMOS power transistor BLF1820-90 for base station applications at frequencies from 1800 to 2000 MHz.