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MFG:PHILIPS  D/C:N/A  

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Part Number: BLF1822-10

 

MFG: PHILIPS

 

D/C: N/A

Description: 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.


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BLF1822-10 General Description


10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

BLF1822-10 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 2.2 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF1822-10 Features

* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA:
Output power = 10 W (PEP)
Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
Efficiency = 39% at 900 MHz, 34% at 2200 MHz
dim = -31 dBc at 900 MHz, -28 dBc at 2200 MHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (HF to 2200 MHz)
* No internal matching for broadband operation.

BLF1822-10 Typical Application

* RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range
* Broadcast drivers.

BLF1822-10 Connection Diagram

BLF1822-10  Connection Diagram

BLF1822-10 datasheet

BLF1822-10
PDF/DataSheet Download

  • Datasheet: BLF1822-10
  • File Size: 160463 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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