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BLF1822-10

Features: * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: Output power = 10 W (PEP) Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz Efficiency = 39% at 900 MHz, 34% at 2200 MHz dim = -31 dBc at 900 MHz, -28 dBc at 2200 MHz* Easy power control* Excellent ruggedness* High p...

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BLF1822-10: Features: * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: Output power = 10 W (PEP) Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz Efficiency = 39% at 900 MHz, 34% at 2200...

BLF1822-10 Data Sheet

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Part Number:
BLF1822-10
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA:
Output power = 10 W (PEP)
Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
Efficiency = 39% at 900 MHz, 34% at 2200 MHz
dim = -31 dBc at 900 MHz, -28 dBc at 2200 MHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (HF to 2200 MHz)
* No internal matching for broadband operation.


Application

* RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range
* Broadcast drivers.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 2.2 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

10 W LDMOS power transistor BLF1822-10 for base station applications at frequencies from HF to 2200 MHz.


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