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Part Number: BLF2047

 

MFG: PHILIP

 

 

Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a cera...


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BLF2047 General Description


Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange.

BLF2047 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 9 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF2047 Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (1.8 to 2.2 GHz).
* Internal input and output matching for high gain and efficiency

BLF2047 Typical Application

* Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range.

BLF2047 Connection Diagram

BLF2047  Connection Diagram

BLF2047 datasheet

BLF2047
PDF/DataSheet Download

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BLF2047 Relative Products

  • BLF2045

    BLF2045

    Silicon N-channel enhancement mode lateral D-MOS transistor BLF2045 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.

  • BLF2043F,135

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  • BLF2043

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    Silicon N-channel enhancement mode lateral D-MOS transistor BLF2043 encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.

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