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BLF225

Features: · Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 40 V VGS gate-source voltage 20 V ID DC drain current 9 A Ptot to...

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SeekIC No. : 004300552 Detail

BLF225: Features: · Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ...

BLF225 Data Sheet

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Part Number:
BLF225
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Easy power control
· Good thermal stability
· Withstands full load mismatch.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 40 V
VGS gate-source voltage 20 V
ID DC drain current 9 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 68 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF225 designed for communications transmitter applications in the VHF frequency range.

The transistor BLF225 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.




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