BLF244 Selling Leads, Price trend, BLF244 DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low noise figure· Easy power control· Good thermal stability· Withstands full load mismatch· Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V ...

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BLF244: Features: · High power gain· Low noise figure· Easy power control· Good thermal stability· Withstands full load mismatch· Gold metallization ensures excellent reliability.Specifications ...

BLF244 Data Sheet

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Part Number:: BLF244
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/29

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Product Details

Description

Features:

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization ensures excellent reliability.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			3	A
Ptot	total power dissipation	up to Tmb = 25 C; total device;both sections equally loaded		38	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF244 designed for large signal amplifier applications in the VHF frequency range.

The transistor BLF244 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

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BLF244

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