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MFG:NXP  D/C:09+  

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Part Number: BLF244

 

MFG: NXP

 

D/C: 09+

Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the...


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BLF244 General Description


Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

BLF244 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 3 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 38 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF244 Features

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization ensures excellent reliability.

BLF244 datasheet

BLF244
PDF/DataSheet Download

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