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MFG:NXP D/C:09+


Part Number: BLF244
MFG: NXP
D/C: 09+
Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the...
MFG:NXP D/C:09+


MFG: NXP
D/C: 09+
Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the...
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 3 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 38 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF244
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