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BLF247B

Features: * High power gain* Easy power control* Good thermal stability* Withstands full load mismatch.Application* Large signal applications in the VHF frequency range.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V...

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SeekIC No. : 004300557 Detail

BLF247B: Features: * High power gain* Easy power control* Good thermal stability* Withstands full load mismatch.Application* Large signal applications in the VHF frequency range.PinoutSpecifications ...

BLF247B Data Sheet

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Part Number:
BLF247B
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High power gain
* Easy power control
* Good thermal stability
* Withstands full load mismatch.


Application

* Large signal applications in the VHF frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±20 V
ID DC drain current 13 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 280 W
Tstg storage temperature -65 +150 C
Tj junction temperature +200 C



Description

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor BLF247B encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor.


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