Transistors RF MOSFET Power 300W, HF-500MHz
BLF573S: Transistors RF MOSFET Power 300W, HF-500MHz
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 225 MHz | Gain : | 27.2 dB |
| Output Power : | 300 W | Drain-Source Breakdown Voltage : | 110 V |
| Continuous Drain Current : | 42 A | Gate-Source Breakdown Voltage : | 11 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502B |
| Packaging : | Bulk |