BLF574

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 11 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 110 V
Continuous Drain Current : 42 A
Package / Case : SOT502B


Description

The BLF574 is designed as one kind of power LDMOS transistor BLF574 for broadcast applications and industrial applications in the HF to 500 MHz band.Features of it are:(1)typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA:output power=500 W,power gain=26.5 dB, efficiency=70 %;(2)easy power control;(3)integrated ESD protection;(4)excellent ruggedness;(5)high efficiency;(6)excellent thermal stability;(7)designed for broadband operation (10 MHz to 500 MHz);(8)compliant to directive 2002/95/EC, regarding restriction of hazardous substances(RoHS).

The BLF574 can be used in industrial, scientific and medical applications and broadcast transmitter applications.And the DC characteristics of it can be summarized as:(1)drain-source breakdown voltage:110 V;(2)gate-source threshold voltage:1.25 to 2.25 V;(3)drain leakage current:2.8 uA;(4)drain cut-off current:37.5 A;(5)gate leakage current:280 nA;(6)drain-source on-state resistance:0.14 ;(7)feedback capacitance:1.5 pF;(8)input capacitance:204 pF;(9)output capacitance:72 pF.If you want to know more information such as the electrical characteristics about the BLF574,please download the datasheet in www.seekdatasheet.com or www.chinaicmart.com.