MFG:PHILIPS Package Cooled:N/A D/C:N/A
MFG: PHILIPS
Package Cooled: N/A
D/C: N/A
Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (S...
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | − | 75 | V | |
| VGS | gate-source voltage | − | ±15 | V | |
| Ptot | total power dissipation | under RF conditions; Th 25 °C | − | 110 | W |
| Tstg | storage temperature | −65 | +150 | ||
| Tj | junction temperature | − | 200 |
BLL1214-35
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