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BLL1214-35

Transistors RF MOSFET Power BULK TNS-MICP

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SeekIC No. : 00220600 Detail

BLL1214-35: Transistors RF MOSFET Power BULK TNS-MICP

BLL1214-35 Data Sheet

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Part Number:
BLL1214-35
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.2 GHz to 1.4 GHz Gain : 13 dB
Output Power : 35 W Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 10 A Gate-Source Breakdown Voltage : +/- 15 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-467C
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Gain : 13 dB
Package / Case : SOT-467C
Output Power : 35 W
Frequency : 1.2 GHz to 1.4 GHz
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 75 V


Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.


Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   − 75 V
VGS gate-source voltage   − ±15 V
Ptot total power dissipation under RF conditions; Th 25 °C − 110 W
Tstg storage temperature   −65 +150
Tj junction temperature   − 200



Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLL1214-35 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.




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