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MFG:PHILIPS  Package Cooled:N/A  D/C:N/A  

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Part Number: BLL1214-250

 

MFG: PHILIPS

Package Cooled: N/A

D/C: N/A

Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (S...


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BLL1214-250 General Description


Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

BLL1214-250 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   75 V
VGS gate-source voltage   ±22 V
Ptot total power dissipation Th 70 °C; tp = 1 ms; = 10% 400 W
Tstg storage temperature   −65 150
Tj junction temperature   200

BLL1214-250 Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.

BLL1214-250 Typical Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.

BLL1214-250 datasheet

BLL1214-250
PDF/DataSheet Download

  • Datasheet: BLL1214-250
  • File Size: 81208 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

Find BLL1214-250 Suppliers

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  • L-band radar LDMOS driver transistor 
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