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BLL1214-250

Features: • High power gain• Easy power control• Excellent ruggedness• Source on mounting base eliminates DC isolators,reducing common mode inductance.Application• L-band radar applications in the 1200 to 1400 MHz frequency range.Specifications SYMBOL PARAMETER ...

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BLL1214-250: Features: • High power gain• Easy power control• Excellent ruggedness• Source on mounting base eliminates DC isolators,reducing common mode inductance.Application• L-ba...

BLL1214-250 Data Sheet

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Part Number:
BLL1214-250
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.


Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   − 75 V
VGS gate-source voltage   − ±22 V
Ptot total power dissipation Th 70 °C; tp = 1 ms; = 10% − 400 W
Tstg storage temperature   −65 150
Tj junction temperature   − 200



Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLL1214-250 encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.




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