BLL1214-250 Selling Leads, Price trend, BLL1214-250 DataSheet download, circuit diagram from SeekIC.com

Features: • High power gain• Easy power control• Excellent ruggedness• Source on mounting base eliminates DC isolators,reducing common mode inductance.Application• L-band radar applications in the 1200 to 1400 MHz frequency range.Specifications SYMBOL PARAMETER ...

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SeekIC No. : 004300632 Detail

BLL1214-250: Features: • High power gain• Easy power control• Excellent ruggedness• Source on mounting base eliminates DC isolators,reducing common mode inductance.Application• L-ba...

BLL1214-250 Data Sheet

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Part Number:: BLL1214-250
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/4

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Recent History
What is this?

BLL1214-250,112 evaluate
US $235.99 - 237.83 / Piece

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Product Details

Description

Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.

Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage		−	75	V
V_GS	gate-source voltage		−	±22	V
P_tot	total power dissipation	T_h 70 °C; t_p = 1 ms; = 10%	−	400	W
T_stg	storage temperature		−65	150
T_j	junction temperature		−	200

Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLL1214-250 encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

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BLL1214-250

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