Transistors RF MOSFET Power RF LDMOS L-BAND
BLL1214-250,112: Transistors RF MOSFET Power RF LDMOS L-BAND
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Transistors RF MOSFET Power TRANS L-BAND RADAR LDMOS
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1.2 GHz to 1.4 GHz | Gain : | 12 dB |
Output Power : | 250 W | Drain-Source Breakdown Voltage : | 75 V |
Continuous Drain Current : | 45 A | Gate-Source Breakdown Voltage : | +/- 22 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502A |
Packaging : | Tube |
Technical/Catalog Information | BLL1214-250,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 75V |
Current Rating | 1uA |
Package / Case | 2-LDMOST, SOT502A |
Packaging | Tray |
Drawing Number | 568; SOT502; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLL1214 250,112 BLL1214250,112 568 2424 ND 5682424ND 568-2424 |