BLL6H1214-500

Transistors RF MOSFET Power 500W, 1.2-1.4GHz L-Band, Radar Appl.

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BLL6H1214-500 Picture
SeekIC No. : 00220542 Detail

BLL6H1214-500: Transistors RF MOSFET Power 500W, 1.2-1.4GHz L-Band, Radar Appl.

floor Price/Ceiling Price

Part Number:
BLL6H1214-500
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Dual Common Source Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V Continuous Drain Current : 72 A
Gate-Source Breakdown Voltage : 13 V Maximum Operating Temperature : + 150 C
Package / Case : SOT502B Packaging : Bulk    

Description

Frequency :
Gain :
Output Power :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 13 V
Packaging : Bulk
Configuration : Dual Common Source
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT502B
Continuous Drain Current : 72 A


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