BLL6H1214-500,112

Transistors RF MOSFET Power TRANS L-BAND RADAR LDMOS

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SeekIC No. : 00220063 Detail

BLL6H1214-500,112: Transistors RF MOSFET Power TRANS L-BAND RADAR LDMOS

floor Price/Ceiling Price

US $ 412.56~412.56 / Piece | Get Latest Price
Part Number:
BLL6H1214-500,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~16
  • Unit Price
  • $412.56
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 1.2 GHz to 1.4 GHz Gain : 17 dB
Output Power : 500 W Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 45 A Gate-Source Breakdown Voltage : 13 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-539A
Packaging : Tube    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Output Power : 500 W
Package / Case : SOT-539A
Gain : 17 dB
Frequency : 1.2 GHz to 1.4 GHz
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 45 A


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