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Part Number: BLU60/12

 

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Description: N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters i...


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BLU60/12 General Description


N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

BLU60/12 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBOM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16,5v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC  max. 12 A
(peak value); f > 1 MHz   ICM  max. 36
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 110
Storage temperature  Tstg              -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLU60/12 Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
* internal matching to achieve an optimum wideband capability and high power gain.
* gold metallization ensures excellent reliability.

BLU60/12 Connection Diagram

BLU60/12  Connection Diagram

BLU60/12 datasheet

BLU60/12
PDF/DataSheet Download

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BLU60/12 Relative Products

  • BLU45/12

    BLU45/12

    N-P-N silicon planar epitaxial transistor BLU45/12 in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

  • BLU30/12

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    N-P-N silicon planar epitaxial transistor BLU30/12 primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

  • BLU20/12

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    N-P-N silicon planar epitaxial transistor BLU20/12 primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

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