BLU99

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging :


Features:

* multi-base structure and diffused emitter-ballasting resistors for an  optimum temperature profile;
* gold metallization ensures excellent reliability.


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCBOM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	16v
Emitter-base voltage (open collector)	Vebo	max.	3v
Collector current
d.c. or average	IC	max.	0.8 A
(peak value); f > 1 MHz	ICM	max.	2.5 A
D.C. power dissipation up to Tmb =50 °C	Ptot (d.c.)        max.     12,5 W
R.F. power dissipation
f > 1 MHz; Tmb = 25 °C	Ptot (r.f.)	max.	19 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLU99 primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.