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BLU99/SL

Features: * multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;* gold metallization ensures excellent reliability.Pinout Specifications Collector-base voltage (open emitter)peak value VCBOM max. 36v Collector-emitter voltage (open base...

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SeekIC No. : 004300671 Detail

BLU99/SL: Features: * multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;* gold metallization ensures excellent reliability.Pinout Specifications Collector...

BLU99/SL Data Sheet

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Part Number:
BLU99/SL
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* multi-base structure and diffused emitter-ballasting resistors for an  optimum temperature profile;
* gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBOM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC  max. 0.8 A
(peak value); f > 1 MHz   ICM  max. 2.5 A
D.C. power dissipation up to Tmb =50 °C Ptot (d.c.)        max.     12,5 W
 
R.F. power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 19 W
Storage temperature  Tstg              -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



Description

N-P-N silicon planar epitaxial transistor BLU99/SL primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


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