BLV20

Configuration :
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Maximum Operating Frequency : 175 MHz
Package / Case : SOT-123
Continuous Collector Current : 1 A
Maximum DC Collector Current : 2.5 A
Power Dissipation : 20 W


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCBSM	max.	65v
Collector-emitter voltage (open base)	Vceo	max.	36v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	0.9 A
(peak value); f > 1 MHz	ICM	max.	2.5 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C	Ptot (r.f.)	max.	20 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLV20 intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor BLV20 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.

BLV20 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.