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MFG:MOT
Part Number: BLV20
MFG: MOT
Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters wi...
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BLV20
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DataSheet
General Description
BLV20 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV20 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 65v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 36v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 0.9 A | ||
| (peak value); f > 1 MHz | ICM | max. | 2.5 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 20 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV20 Connection Diagram
BLV20
PDF/DataSheet Download
- Datasheet: BLV20
- File Size: 83772 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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