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Part Number: BLV2045N

 

 

Package Cooled: 500

 

Description: NPN silicon planar UHF power transistor in a 2-lead SOT390Aflangepackagewithaceramiccap.Theemitter is connected to the ...


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BLV2045N General Description


NPN silicon planar UHF power transistor in a 2-lead SOT390Aflangepackagewithaceramiccap.Theemitter is connected to the flange.

BLV2045N Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 65 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 4 A
IC(AV) average collector current 4 A
Ptot total power dissipation Tmb =25 °C 125 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV2045N Features

* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internalinputandoutputmatchingforaneasydesignof wideband circuits.

BLV2045N Typical Application

* Common emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range.

BLV2045N Connection Diagram

BLV2045N Connection Diagram

BLV2045N datasheet

BLV2045N
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Related Part Number

BLV2045N Relative Products

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    NPN silicon planar transistor BLV2044 in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange.

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  • BLV20

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    N-P-N silicon planar epitaxial transistor BLV20 intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor BLV20 is resistance stabilized and is guaranteed to withstand severe load mismatc...

  • BLV194

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    NPN silicon planar epitaxial transistor BLV194 intended for common emitter class-AB operation in the 900 MHz communications band.The BLV194 has a SOT171 flange envelope with a ceramic cap.All leads are isolated from the mounting base.

  • BLV193

    BLV193

    NPN silicon planar epitaxial transistor BLV193 intended for common emitter class-A and class-AB operation in the 900 MHz communications band.The BLV193 has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.

  • BLV12

    BLV12

    NPN silicon planar epitaxial transistor BLV12 encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.BLV12 is designed for common emitter,class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from th...

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