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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: BLV33

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: NPN silicon planar epitaxial transistor encapsulated in a 1/16" 4 fslead SOT147 capstan package with ceramic cap. All l...


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BLV33 General Description


NPN silicon planar epitaxial transistor encapsulated in a 1/16" 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud.

BLV33 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 65 V
VCES collector-emitter voltage open base  33 V
VEBO emitter-base voltage open collector 4 V
IC collector current 12.5 A
IC(AV) collector current 12.5 A
ICM collector current  f > 1 MHz 20 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 165 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV33 Features

* Diffused emitter ballasting resistors for an optimum temperature profile
* Gold sandwich metallization ensures excellent reliability.

BLV33 Typical Application

* Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.

BLV33 Connection Diagram

BLV33 Connection Diagram

BLV33 datasheet

BLV33
PDF/DataSheet Download

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Related Part Number

BLV33 Relative Products

  • BLV32F

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    The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters.

  • BLV31

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    The ASI BLV31 is Designed for use in VHF amplifiers

  • BLV30

    BLV30

    The ASI BLV30 is Designed for Television Band IV & V Applications up to 860 MHz.

  • BLV25

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    N-P-N silicon planar epitaxial transistor BLV25 primarily for use in v.h.f.-f.m. broadcast transmitters.

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