BLV33

Configuration :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 33 V
Maximum Operating Frequency : 224 MHz
Continuous Collector Current : 12.5 A
Maximum DC Collector Current : 20 A
Power Dissipation : 132 W
Package / Case : SOT-147


Features:

* Diffused emitter ballasting resistors for an optimum temperature profile
* Gold sandwich metallization ensures excellent reliability.


Application

* Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter		65	V
VCES	collector-emitter voltage	open base		33	V
VEBO	emitter-base voltage	open collector		4	V
IC	collector current			12.5	A
IC(AV)	collector current			12.5	A
ICM	collector current	f > 1 MHz		20	A
Ptot	total power dissipation	f > 1 MHz;Ts = 103 °C (note 1)		165	W
Tstg	storage temperature		-65	+150
Tj	operating junction temperature			200

Description

NPN silicon planar epitaxial transistor BLV33 encapsulated in a 1/16" 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud.