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BLV75/12

Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideband capability and high power gainPinoutSpecifications Collector-base voltage (open emitter)peak...

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SeekIC No. : 004300689 Detail

BLV75/12: Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideba...

BLV75/12 Data Sheet

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Part Number:
BLV75/12
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16.5v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC  max. 15 A
(peak value); f > 1 MHz   ICM  max. 45 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 150 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



Description

N-P-N silicon planar epitaxial transistor BLV75/12 primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.


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