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Part Number: BLV75/12

 

MFG: PHI

 

 

Description: N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmu...


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BLV75/12 General Description


N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

BLV75/12 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16.5v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC  max. 15 A
(peak value); f > 1 MHz   ICM  max. 45 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 150 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV75/12 Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain

BLV75/12 Connection Diagram

BLV75/12 Connection Diagram

BLV75/12 datasheet

BLV75/12
PDF/DataSheet Download

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Related Part Number

BLV75/12 Relative Products

  • BLV59

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    The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers.The BLV58 is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, whi...

  • BLV57

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    Two n-p-n silicon planar epitaxial transistor BLV57 sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. elevision transmitters and transposers.The package of BLV57 is an 8-lead flange type with a ceramic cap...

  • BLV45/12

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    N-P-N silicon planar epitaxial transistor BLV45/12 primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

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    The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters.

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