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BLV861

Features: * Double stage internal input and output matching networks for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Common emitter class-AB output stages of...

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SeekIC No. : 004300692 Detail

BLV861: Features: * Double stage internal input and output matching networks for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Go...

BLV861 Data Sheet

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Part Number:
BLV861
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* Double stage internal input and output matching networks for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Application

* Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 65 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 15 A
Ptot total power dissipation Tmb =70 °C; note 1; see Fig.2 220 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV861 with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.


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