BLV862

Features: * Double stage internal input and output matching networks for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Common emitter class-AB operation in out...

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SeekIC No. : 004300693 Detail

BLV862: Features: * Double stage internal input and output matching networks for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Go...

floor Price/Ceiling Price

Part Number:
BLV862
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* Double stage internal input and output matching networks for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.





Application

* Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound).




Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 65 V
VCES collector-emitter voltage open base 30 V
VEBO emitter-base voltage open collector 3 V
IC peak collector current 25 A
Ptot total power dissipation Tmb =20 350 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200





Description

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The BLV862 is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.

The BLV862 is designed as one kind of UHF linear push-pull power transistor which produced by Philips Semiconductors with three features:(1)gold metallization ensures excellent reliability;(2)polysilicon emitter ballasting resistors for an optimum temperature profile;(3)double stage internal input and output matching networks for an optimum wideband capability and high gain.It can be used in common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound).

And the BLV862 has two sections in push-pull configuration.The device is encapsulated in a SOT262B 4-lead rectangular flange package,with two ceramic caps.The absolute maximum rating can be summarized as:(1)collector-base voltage:65 V;(2)collector-emitter voltage:30 V;(3)emitter-base voltage:3 V;(4)collector current (DC):25 A;(5)total power dissipation:350 W;(6)storage temperature:-65 +150°C;(7)operating junction temperature:200 °C;(8)thermal resistance from junction to mounting base:0.5 K/W;(9)thermal resistance from mounting base to heatsink:0.15 K/W.Note:thermal resistance is determined under specified RF operating conditions.If you want to know more information such as the electrical characteristics about the BLV862,please download the datasheet in www.seekdatasheet.com .






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