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BLV897

Features: * Internal input matching for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Common emitter class-AB operation in base stations in the 800 to 960 MHz ...

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SeekIC No. : 004300694 Detail

BLV897: Features: * Internal input matching for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellen...

BLV897 Data Sheet

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Part Number:
BLV897
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Application

* Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current DC or average value 5 A
ICM collector current peak value f > 1 MHz 5 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 97 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar transistor BLV897 with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.


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