BLV897 General Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
BLV897 Features
* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV897 Typical Application
* Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
BLV897 Connection Diagram
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