Features: · Avalanche Energy Specified · Fast Switching · Simple Drive RequirementsSpecifications Parameter Parameter Value Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage + 20 V ID Continuous Drain Current 7.5 A Continuous Drain Current ( TC=100 °C) 4.6...
BLV8N60: Features: · Avalanche Energy Specified · Fast Switching · Simple Drive RequirementsSpecifications Parameter Parameter Value Units VDS Drain-Source Voltage 650 V VGS Gate-Source Vo...
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Parameter | Parameter | Value | Units |
VDS | Drain-Source Voltage | 650 | V |
VGS | Gate-Source Voltage | + 20 | V |
ID | Continuous Drain Current | 7.5 | A |
Continuous Drain Current ( TC=100 °C) | 4.6 | A | |
IDM | Drain Current (pulsed) (Note 1) | 30 | A |
PD | Power Dissipation | 147 | W |
Linear Derating Factor | 1.18 | W/ | |
EAS | Single Pulsed Avalanche Energy (Note 2) | 230 | mJ |
IAR | Avalanche Current (Note 1) | 7.5 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 14.7 | mJ |
TJ | Operating Junction Temperature Range | -55 to +150 | |
TSDG | Storage Temperature Range | -55 to +150 |
This advanced high voltage MOSFET BLV8N60 is produced using Belling's proprietary DMOS technology. Designed for high efficiency switch mode power supply.