Package Cooled:TO-220F D/C:06+
Package Cooled: TO-220F
D/C: 06+
Description: This advanced high voltage MOSFET is produced using Belling's proprietary DMOS technology. Designed fo...
This advanced high voltage MOSFET is produced using Belling's proprietary DMOS technology. Designed for high efficiency switch mode power supply.
| Parameter | Parameter | Value | Units |
| VDS | Drain-Source Voltage | 650 | V |
| VGS | Gate-Source Voltage | + 20 | V |
| ID | Continuous Drain Current | 7.5 | A |
| Continuous Drain Current ( TC=100 °C) | 4.6 | A | |
| IDM | Drain Current (pulsed) (Note 1) | 30 | A |
| PD | Power Dissipation | 147 | W |
| Linear Derating Factor | 1.18 | W/ | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 230 | mJ |
| IAR | Avalanche Current (Note 1) | 7.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 14.7 | mJ |
| TJ | Operating Junction Temperature Range | -55 to +150 | |
| TSDG | Storage Temperature Range | -55 to +150 |
BLV8N60
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