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BLV910

Features: * Internal input matching to achieve high power gain and easy design of wideband circuits* Emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Base station transmitters in the 820 to 960 MHz range.PinoutSpecificat...

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SeekIC No. : 004300700 Detail

BLV910: Features: * Internal input matching to achieve high power gain and easy design of wideband circuits* Emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excel...

BLV910 Data Sheet

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Part Number:
BLV910
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* Internal input matching to achieve high power gain and easy design of wideband circuits
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Application

* Base station transmitters in the 820 to 960 MHz range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current 1.5 A
IC(AV) collector current 1.5 A
Ptot total power dissipation Tmb =25 °C 30 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV910 intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.


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