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Part Number: BLV910

 

 

Package Cooled: 500

 

Description: NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated ...


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BLV910 General Description


NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.

BLV910 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current 1.5 A
IC(AV) collector current 1.5 A
Ptot total power dissipation Tmb =25 °C 30 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV910 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.

BLV910 Typical Application

* Base station transmitters in the 820 to 960 MHz range.

BLV910 Connection Diagram

BLV910 Connection Diagram

BLV910 datasheet

BLV910
PDF/DataSheet Download

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Related Part Number

BLV910 Relative Products

  • BLV91/SL

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  • BLV909

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    NPN silicon planar epitaxial transistor BLV909 in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

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    NPN silicon planar epitaxial power transistor BLV904 in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base.

  • BLV90

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    NPN silicon planar epitaxial transistor BLV90 designed for use in mobile radio transmitters in the 900 MHz band.

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  • BLV897

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    NPN silicon planar transistor BLV897with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.

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