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MFG:MOT  

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Part Number: BLV90

 

MFG: MOT

 

 

Description: NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.


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BLV90 General Description


NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

BLV90 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC,IC(AV)  max. 0.2 A
(peak value); f > 1 MHz   ICM  max. 0.6 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 3.5 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV90 Features

* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6).

BLV90 Connection Diagram

BLV90 Connection Diagram

BLV90 datasheet

BLV90
PDF/DataSheet Download

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