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Part Number: BLV91/SL

 

 

Package Cooled: 500

 

Description: NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.


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BLV91/SL General Description


NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

BLV91/SL Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC,IC(AV)  max. 0.4 A
(peak value); f > 1 MHz   ICM  max. 1.2 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 6 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV91/SL Features

* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6).

BLV91/SL Connection Diagram

BLV91/SL  Connection Diagram

BLV91/SL datasheet

BLV91/SL
PDF/DataSheet Download

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