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Part Number: BLV92

 

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Description: N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz commun...


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BLV92 General Description


N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

BLV92 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC(AV)  max. 1.5 A
(peak value); f > 1 MHz   ICM  max. 4.0 A
Total power dissipation Ptot(dc)           max.     9W

at Tmb =94 °C 
at Tmb = 94 °C; f > 1 MHz 

 Ptot (r.f.) max. 20 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

 

BLV92 Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.

BLV92 Connection Diagram

BLV92 Connection Diagram

BLV92 datasheet

BLV92
PDF/DataSheet Download

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Related Part Number

BLV92 Relative Products

  • BLV910

    BLV910

    NPN silicon planar epitaxial transistor BLV910 intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.

  • BLV91/SL

    BLV91/SL

    NPN silicon planar epitaxial transistor BLV91/SL designed for use in mobile radio transmitters in the 900 MHz band.

  • BLV909

    BLV909

    NPN silicon planar epitaxial transistor BLV909 in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

  • BLV904

    BLV904

    NPN silicon planar epitaxial power transistor BLV904 in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base.

  • BLV90

    BLV90

    NPN silicon planar epitaxial transistor BLV90 designed for use in mobile radio transmitters in the 900 MHz band.

  • BLV8N60

    BLV8N60

    This advanced high voltage MOSFET BLV8N60 is produced using Belling's proprietary DMOS technology. Designed for high efficiency switch mode power supply.

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