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Part Number: BLV920

 

MFG: C

 

 

Description: NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated ...


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BLV920 General Description


NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.

BLV920 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 3 A
IC(AV) average collector current 3 A
Ptot total power dissipation up to Tmb =25 °C 50 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV920 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.

BLV920 Typical Application

* Base station transmitters in the 820 to 960 MHz range.

BLV920 Connection Diagram

BLV920 Connection Diagram

BLV920 datasheet

BLV920
PDF/DataSheet Download

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Related Part Number

BLV920 Relative Products

  • BLV92

    BLV92

    N-P-N silicon planar epitaxial transistor BLV92 primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

  • BLV910

    BLV910

    NPN silicon planar epitaxial transistor BLV910 intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.

  • BLV91/SL

    BLV91/SL

    NPN silicon planar epitaxial transistor BLV91/SL designed for use in mobile radio transmitters in the 900 MHz band.

  • BLV909

    BLV909

    NPN silicon planar epitaxial transistor BLV909 in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

  • BLV904

    BLV904

    NPN silicon planar epitaxial power transistor BLV904 in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base.

  • BLV90

    BLV90

    NPN silicon planar epitaxial transistor BLV90 designed for use in mobile radio transmitters in the 900 MHz band.

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