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Part Number: BLV93

 

 

Package Cooled: 500

 

Description: N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz commun...


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BLV93 General Description


N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

BLV93 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC(AV)  max. 1.6 A
(peak value); f > 1 MHz   ICM  max. 4.8 A
Total power dissipation Ptot(dc)           max.     18W

at Tmb =94 °C 
at Tmb = 94 °C; f > 1 MHz 

 Ptot (r.f.) max. 24 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV93 Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.

BLV93 Connection Diagram

BLV93 Connection Diagram

BLV93 datasheet

BLV93
PDF/DataSheet Download

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Related Part Number

BLV93 Relative Products

  • BLV920

    BLV920

    NPN silicon planar epitaxial transistor BLV920 intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.

  • BLV92

    BLV92

    N-P-N silicon planar epitaxial transistor BLV92 primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

  • BLV910

    BLV910

    NPN silicon planar epitaxial transistor BLV910 intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.

  • BLV91/SL

    BLV91/SL

    NPN silicon planar epitaxial transistor BLV91/SL designed for use in mobile radio transmitters in the 900 MHz band.

  • BLV909

    BLV909

    NPN silicon planar epitaxial transistor BLV909 in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

  • BLV904

    BLV904

    NPN silicon planar epitaxial power transistor BLV904 in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base.

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