BLV946

Features: * Internal input and output matching for easy matching, high gain and efficiency* Poly-silicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Base stations in the 850 to 960 MHz frequency range.PinoutSpecific...

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BLV946 Picture
SeekIC No. : 004300706 Detail

BLV946: Features: * Internal input and output matching for easy matching, high gain and efficiency* Poly-silicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures e...

floor Price/Ceiling Price

Part Number:
BLV946
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

* Internal input and output matching for easy matching, high gain and efficiency
* Poly-silicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.



Application

* Base stations in the 850 to 960 MHz frequency range.


Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 6 A
IC(AV) average collector current 6 A
Ptot total power dissipation up to Tmb =25 °C 90 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar transistor BLV946 intended for common emitte class-AB operation. The transistor has internal input and output matching by means of MOS capacitors. The encapsulation is a SOT273A flange envelope with a ceramic cap. All leads are isolated from the flange.


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