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Part Number: BLV958FL

 

MFG: PHILIPS

 

 

Description: NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have...


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BLV958FL General Description


NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internalinput and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, both with a ceramic cap.

BLV958FL Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current DC or average value 15 A
ICM collector current peak value f > 1 MHz 15 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)
250 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV958FL Features

* Internal input and output matching for easy matching,high gain and efficiency
* Poly-silicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.

BLV958FL Typical Application

* Base stations in the 800 to 960 MHz frequency range.

BLV958FL Connection Diagram

BLV958FL  Connection Diagram

BLV958FL datasheet

BLV958FL
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