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MFG:PHL
Part Number: BLV98CE
MFG: PHL
Description: NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in r...
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BLV98CE
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DataSheet
General Description
BLV98CE General Description
NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLV98CE Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 50 | V | |
| VCES | collector-emitter voltage | open base | 27 | V | |
| VEBO | emitter-base voltage | open collector | 3.5 | V | |
| IC | collector current | DC or average value | 1.5 | A | |
| ICM | collector current | peak value f > 1 MHz | 4.5 | A | |
| Ptot | total power dissipation | f > 1 MHz;Ts = 103 °C (note 1) |
40 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV98CE Features
* Internal input matching to achieve high power gain
* Implanted ballasting resistors an for optimum temperature profile
* Gold metallization ensures excellent reliability
* Implanted ballasting resistors an for optimum temperature profile
* Gold metallization ensures excellent reliability
BLV98CE Connection Diagram
BLV98CE
PDF/DataSheet Download
- Datasheet: BLV98CE
- File Size: 64327 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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