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BLV9N60

Specifications Symbol Parameter Value Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage + 20 V ID Continuous Drain Current 8.5 A Continuous Drain Current ( TC=100 ) 5.5 A IDM Drain Current (pulsed) (Note 1) 34 A PD Power D...

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SeekIC No. : 004300713 Detail

BLV9N60: Specifications Symbol Parameter Value Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage + 20 V ID Continuous Drain Current 8.5 A Continuous Dr...

BLV9N60 Data Sheet

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Part Number:
BLV9N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Specifications

Symbol Parameter
Value
Units
VDS Drain-Source Voltage
600
V
VGS Gate-Source Voltage
+ 20
V
ID Continuous Drain Current
8.5
A
Continuous Drain Current ( TC=100 )
5.5
A
IDM Drain Current (pulsed) (Note 1)
34
A
PD Power Dissipation
125
W
Linear Derating Factor
1.0
W/
EAS Single Pulsed Avalanche Energy (Note2)
667
mJ
IAR Avalanche Current
8.5
A
EAR Repetitive Avalanche Energy
12.5
mJ
Tj Operating Junction Temperature Range
-55 to +150
TSDG Storage Temperature Range
-55 to +150



Description

This advanced high voltage MOSFET BLV9N60 is produced using Belling's proprietary DMOS technology.

The BLV9N60 is Designed for high efficiency switch mode power supply.


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