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Package Cooled:TO-220F  D/C:06+  

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Part Number: BLV9N60

 

 

Package Cooled: TO-220F

D/C: 06+

Description: This advanced high voltage MOSFET is produced using Belling's proprietary DMOS technology.Designed for high eff...


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BLV9N60 General Description


This advanced high voltage MOSFET is produced using Belling's proprietary DMOS technology.

Designed for high efficiency switch mode power supply.

BLV9N60 Maximum Ratings

Symbol Parameter
Value
Units
VDS Drain-Source Voltage
600
V
VGS Gate-Source Voltage
+ 20
V
ID Continuous Drain Current
8.5
A
Continuous Drain Current ( TC=100 )
5.5
A
IDM Drain Current (pulsed) (Note 1)
34
A
PD Power Dissipation
125
W
Linear Derating Factor
1.0
W/
EAS Single Pulsed Avalanche Energy (Note2)
667
mJ
IAR Avalanche Current
8.5
A
EAR Repetitive Avalanche Energy
12.5
mJ
Tj Operating Junction Temperature Range
-55 to +150
TSDG Storage Temperature Range
-55 to +150

BLV9N60 datasheet

BLV9N60
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